[PS-6-20] High Performance Solution-deposited InGaZnO Thin Film Transistors using Microwave Annealing and Ar/O₂ Plasma Treatment at Low Process Temperature

J.G. Gu¹、K.S. Kim¹、H.M. An²、W.J. Cho¹ (1.Kwangwoon Univ. of Korea、2.Osan College. of Korea (Korea))

https://doi.org/10.7567/SSDM.2013.PS-6-20