High performance and electrical characterization of write-once-read-many-times memory devices base on IGZO thin film with O<sub>2</sub> plasma treatment

[PS-6-22] High performance and electrical characterization of write-once-read-many-times memory devices base on IGZO thin film with O₂ plasma treatment

P. Liu¹, T.P. Chen¹, Y.H. Zhao¹, Z. Liu², X.D. Li¹, J.I. Wong¹ (1.Nanyang Technological Univ., 2.Guangdong University of Tech. (Singapore))