High performance and electrical characterization of write-once-read-many-times memory devices base on IGZO thin film with O<sub>2</sub> plasma treatment

[PS-6-22] High performance and electrical characterization of write-once-read-many-times memory devices base on IGZO thin film with O₂ plasma treatment

P. Liu¹、T.P. Chen¹、Y.H. Zhao¹、Z. Liu²、X.D. Li¹、J.I. Wong¹ (1.Nanyang Technological Univ.、2.Guangdong University of Tech. (Singapore))