The Japan Society of Applied Physics

[PS-6-23] Improved Stability of ZnO Thin Film Transistor with Dual Gate Structure under Negative Bias Stress

H.J. Yun1, Y.S. Kim2, Y.M. Kim1, S.D. Yang1, H.D. Lee1, G.W. Lee1 (1.National Univ. of Chungnam, 2.National Nanofab Center (Korea))

https://doi.org/10.7567/SSDM.2013.PS-6-23