[PS-6-3] Effects of High-Temperature Annealing on Properties of Al₂O₃/InAlN Interface Formed by Atomic Layer Deposition

T. Nakano¹、M. Chiba¹、M. Akazawa¹ (1.Hokkaido Univ. (Japan))

https://doi.org/10.7567/SSDM.2013.PS-6-3