[PS-6-33L] GaSb-on-insulator metal-oxide-semiconductor field-effect transistors on Si fabricated by direct wafer bonding technology

M. Yokoyama¹、H. Yokoyama²、M. Takenaka¹、S. Takagi¹ (1.Univ. of Tokyo、2.NTT Photonics Labs., NTT Corp. (Japan))

https://doi.org/10.7567/SSDM.2013.PS-6-33L