[PS-6-4] A Device Performance Study of Stacked Gate Dielectrics AlGaN/GaN MOS-HEMTs by Mixed Oxide Thin Film Growth Techniques

B.Y. Chou¹、Y.S. Wu¹、E.L. Huang¹、W.F. Chen¹、H.Y. Liu¹、W.C. Hsu¹、C.S. Lee²、W.C. Ou¹、C.S. Ho¹ (1.Univ. of National Cheng Kung、2.Univ. of Feng Chia (Taiwan))

https://doi.org/10.7567/SSDM.2013.PS-6-4