[PS-6-4] A Device Performance Study of Stacked Gate Dielectrics AlGaN/GaN MOS-HEMTs by Mixed Oxide Thin Film Growth Techniques

B.Y. Chou¹, Y.S. Wu¹, E.L. Huang¹, W.F. Chen¹, H.Y. Liu¹, W.C. Hsu¹, C.S. Lee², W.C. Ou¹, C.S. Ho¹ (1.Univ. of National Cheng Kung, 2.Univ. of Feng Chia (Taiwan))

https://doi.org/10.7567/SSDM.2013.PS-6-4