Modeling of Read Disturbance Mechanism due to Carrier Trapping in Sub-20nm NAND Flash Memory

2014 International Conference on Solid State Devices and Materials

Sep 8, 2014 - Sep 11, 2014
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

D. Kang¹, K. Lee¹, S. Kwon², S. Kim², Y. Hwang², H. Shin¹ (1.Seoul Natioanl Univ., 2.Samsung Electronics Corp., Ltd. (Korea))