[A-2-5L] Modeling of Read Disturbance Mechanism due to Carrier Trapping in Sub-20nm NAND Flash Memory

D. Kang¹、K. Lee¹、S. Kwon²、S. Kim²、Y. Hwang²、H. Shin¹ (1.Seoul Natioanl Univ.、2.Samsung Electronics Corp., Ltd. (Korea))

https://doi.org/10.7567/SSDM.2014.A-2-5L