DRAM with Storage Capacitance of 3.9 fF using CAAC-OS Transistor with L of 60 nm and having More Than 1-h Retention Characteristics

T. Onuki; K. Kato; M. Nomura; Y. Yakubo; S. Nagatsuka; T. Matsuzaki; S. Hondo; Y. Hata; Y. Okazaki; M. Nagai; T. Atsumi; M. Sakakura; T. Okuda; Y. Yamamoto; S. Yamazaki

doi:https://doi.org/10.7567/SSDM.2014.A-3-3

[A-3-3] DRAM with Storage Capacitance of 3.9 fF using CAAC-OS Transistor with L of 60 nm and having More Than 1-h Retention Characteristics

T. Onuki¹, K. Kato¹, M. Nomura¹, Y. Yakubo¹, S. Nagatsuka¹, T. Matsuzaki¹, S. Hondo¹, Y. Hata¹, Y. Okazaki¹, M. Nagai¹, T. Atsumi¹, M. Sakakura¹, T. Okuda¹, Y. Yamamoto¹, S. Yamazaki¹ (1.Semiconductor Energy Lab. Corp., Ltd. (Japan))

https://doi.org/10.7567/SSDM.2014.A-3-3

2014 International Conference on Solid State Devices and Materials

[A-3-3] DRAM with Storage Capacitance of 3.9 fF using CAAC-OS Transistor with L of 60 nm and having More Than 1-h Retention Characteristics