[A-3-3] DRAM with Storage Capacitance of 3.9 fF using CAAC-OS Transistor with L of 60 nm and having More Than 1-h Retention Characteristics

T. Onuki¹、K. Kato¹、M. Nomura¹、Y. Yakubo¹、S. Nagatsuka¹、T. Matsuzaki¹、S. Hondo¹、Y. Hata¹、Y. Okazaki¹、M. Nagai¹、T. Atsumi¹、M. Sakakura¹、T. Okuda¹、Y. Yamamoto¹、S. Yamazaki¹ (1.Semiconductor Energy Lab. Corp., Ltd. (Japan))

https://doi.org/10.7567/SSDM.2014.A-3-3