The Japan Society of Applied Physics

[A-3-3] DRAM with Storage Capacitance of 3.9 fF using CAAC-OS Transistor with L of 60 nm and having More Than 1-h Retention Characteristics

T. Onuki1, K. Kato1, M. Nomura1, Y. Yakubo1, S. Nagatsuka1, T. Matsuzaki1, S. Hondo1, Y. Hata1, Y. Okazaki1, M. Nagai1, T. Atsumi1, M. Sakakura1, T. Okuda1, Y. Yamamoto1, S. Yamazaki1 (1.Semiconductor Energy Lab. Corp., Ltd. (Japan))

https://doi.org/10.7567/SSDM.2014.A-3-3