[A-4-3] A 4F²-cross-point Phase Change Memory Using Nano-crystalline Doped GeSbTe Material

T. Morikawa¹、K. Akita¹、M. Kinoshita¹、M. Tai¹、T. Ohyanagi¹、N. Takaura¹ (1.LEAP (Japan))

https://doi.org/10.7567/SSDM.2014.A-4-3