[A-4-3] A 4F²-cross-point Phase Change Memory Using Nano-crystalline Doped GeSbTe Material

T. Morikawa¹, K. Akita¹, M. Kinoshita¹, M. Tai¹, T. Ohyanagi¹, N. Takaura¹ (1.LEAP (Japan))

https://doi.org/10.7567/SSDM.2014.A-4-3