[A-8-1] Switching current and thermal stability of Perpendicular magnetic tunnel junction with MgO/CoFeB/Ta/CoFeB/MgO recording structure scaling down to 1X nm

H. Sato^1,2、T. Yamamoto^1,3、E.C.I. Enobio^1,4、M. Yamanouchi^1,4、S. Ikeda^1,2,4、S. Fukami^1,2、K. Kinoshita¹、F. Matsukura^5,1,4、N. Kasai¹、H. Ohno^1,2,4,5 (1.CSIS, Tohoku. Univ.、2.CIIES, Tohoku Univ.、3.ULVAC, Inc.、4.Lab. for Nanoelectronics and Spintronics, RIEC, Tohoku Univ.、5.WPI-AIMR, Tohoku Univ. (Japan))

https://doi.org/10.7567/SSDM.2014.A-8-1