[A-8-1] Switching current and thermal stability of Perpendicular magnetic tunnel junction with MgO/CoFeB/Ta/CoFeB/MgO recording structure scaling down to 1X nm

H. Sato^1,2, T. Yamamoto^1,3, E.C.I. Enobio^1,4, M. Yamanouchi^1,4, S. Ikeda^1,2,4, S. Fukami^1,2, K. Kinoshita¹, F. Matsukura^5,1,4, N. Kasai¹, H. Ohno^1,2,4,5 (1.CSIS, Tohoku. Univ., 2.CIIES, Tohoku Univ., 3.ULVAC, Inc., 4.Lab. for Nanoelectronics and Spintronics, RIEC, Tohoku Univ., 5.WPI-AIMR, Tohoku Univ. (Japan))

https://doi.org/10.7567/SSDM.2014.A-8-1