The Japan Society of Applied Physics

[A-9-3] Comparative Study of Floating Gate Type 3D Fin-Channel Flash Memories with Different Channel Shapes and Interpoly Dielectric Layers

Y.X. Liu1, T. Nabatame2, N. Nguyen2, T. Matsukawa1, K. Endo1, S. O'uchi1, J. Tsukada1, H. Yamauchi1, Y. Ishikawa1, W. Mizubayashi1, Y. Morita1, S. Migita1, H. Ota1, T. Chikyow2, M. Masahara1 (1.AIST, 2.NIMS (Japan))

https://doi.org/10.7567/SSDM.2014.A-9-3