The Japan Society of Applied Physics

[A-9-3] Comparative Study of Floating Gate Type 3D Fin-Channel Flash Memories with Different Channel Shapes and Interpoly Dielectric Layers

Y.X. Liu1、T. Nabatame2、N. Nguyen2、T. Matsukawa1、K. Endo1、S. O'uchi1、J. Tsukada1、H. Yamauchi1、Y. Ishikawa1、W. Mizubayashi1、Y. Morita1、S. Migita1、H. Ota1、T. Chikyow2、M. Masahara1 (1.AIST、2.NIMS (Japan))

https://doi.org/10.7567/SSDM.2014.A-9-3