Epitaxial Growth, Doping, and Electron Transport of the Semiconducting Oxides In2O3, Ga2O3, and SnO2

O. Bierwagen; M.E. White; M.-Y. Tsai; J.S. Speck; T. Nagata; N. Preissler; P. Vogt

doi:https://doi.org/10.7567/SSDM.2014.C-6-1

2014 International Conference on Solid State Devices and Materials

2014年9月8日〜 2014年9月11日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[C-6-1] Epitaxial Growth, Doping, and Electron Transport of the Semiconducting Oxides In₂O₃, Ga₂O₃, and SnO₂

O. Bierwagen^1,2、M.E. White²、M.-Y. Tsai²、J.S. Speck²、T. Nagata³、N. Preissler¹、P. Vogt¹ (1.Paul-Drude-Inst.、2.Univ. of California Santa Barbara、3.NIMS (Germany))

https://doi.org/10.7567/SSDM.2014.C-6-1

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2014 International Conference on Solid State Devices and Materials

[C-6-1] Epitaxial Growth, Doping, and Electron Transport of the Semiconducting Oxides In2O3, Ga2O3, and SnO2

[C-6-1] Epitaxial Growth, Doping, and Electron Transport of the Semiconducting Oxides In₂O₃, Ga₂O₃, and SnO₂