The Japan Society of Applied Physics

2014 International Conference on Solid State Devices and Materials

2014 International Conference on Solid State Devices and Materials

Sep 8, 2014 - Sep 11, 2014
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[E-1-2] Combined PEALD Gate-Dielectric and In-Situ SiN Cap-Layer for Reduced Vth Shift and RDS-ON Dispersion of AlGaN/GaN HEMTs on 200 mm Si Wafer

N. Ronchi1, B. De Jaeger1, M. Van Hove1, R. Roelofs2, T.L. Wu1,3, J. Hu1,3, X. Kang1, S. Decoutere1 (1.imec, 2.ASM, 3.KU Leuven (Belgium))

https://doi.org/10.7567/SSDM.2014.E-1-2