[E-1-2] Combined PEALD Gate-Dielectric and In-Situ SiN Cap-Layer for Reduced V_th Shift and R_DS-ON Dispersion of AlGaN/GaN HEMTs on 200 mm Si Wafer

N. Ronchi¹、B. De Jaeger¹、M. Van Hove¹、R. Roelofs²、T.L. Wu^1,3、J. Hu^1,3、X. Kang¹、S. Decoutere¹ (1.imec、2.ASM、3.KU Leuven (Belgium))

https://doi.org/10.7567/SSDM.2014.E-1-2