Impact of In<sub>1-x</sub>Ga<sub>x</sub>As Capping Layer on Characteristic of III-V Trigate MOSFET Devices

C.-H. Huang; Y. Li

doi:https://doi.org/10.7567/SSDM.2014.E-2-5L

2014 International Conference on Solid State Devices and Materials

2014年9月8日〜 2014年9月11日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[E-2-5L] Impact of In_1-xGa_xAs Capping Layer on Characteristic of III-V Trigate MOSFET Devices

C.-H. Huang^1,2、Y. Li^1,2,3 (1.Parallel and Scientific Computing Lab., National Chiao Tung Univ.、2.Institute of Communications Engineering, National Chiao Tung Univ.、3.Dept. of Electrical and Computer Engineering, National Chiao Tung Univ. (Taiwan))

https://doi.org/10.7567/SSDM.2014.E-2-5L

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2014 International Conference on Solid State Devices and Materials

[E-2-5L] Impact of In1-xGaxAs Capping Layer on Characteristic of III-V Trigate MOSFET Devices

[E-2-5L] Impact of In_1-xGa_xAs Capping Layer on Characteristic of III-V Trigate MOSFET Devices