[E-3-3] 5V High Threshold Voltage Normally-off MIS-HEMTs with Combined Partially Recessed and Multiple Fluorinated-Dielectric Layers Gate Structures
H. Huang1, Y.H. Wang1, Y.C. Liang1, G.S. Samudra1, C.F. Huang2, W.H. Kuo3
(1.National Univ. of Singapore, 2.National Tsing Hua Univ., 3.Indus. Tech. Res. Inst. (Singapore))
https://doi.org/10.7567/SSDM.2014.E-3-3