5V High Threshold Voltage Normally-off MIS-HEMTs with Combined Partially Recessed and Multiple Fluorinated-Dielectric Layers Gate Structures

H. Huang; Y.H. Wang; Y.C. Liang; G.S. Samudra; C.F. Huang; W.H. Kuo

doi:https://doi.org/10.7567/SSDM.2014.E-3-3

2014 International Conference on Solid State Devices and Materials

2014年9月8日〜 2014年9月11日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[E-3-3] 5V High Threshold Voltage Normally-off MIS-HEMTs with Combined Partially Recessed and Multiple Fluorinated-Dielectric Layers Gate Structures

H. Huang¹、Y.H. Wang¹、Y.C. Liang¹、G.S. Samudra¹、C.F. Huang²、W.H. Kuo³ (1.National Univ. of Singapore、2.National Tsing Hua Univ.、3.Indus. Tech. Res. Inst. (Singapore))

https://doi.org/10.7567/SSDM.2014.E-3-3

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