The Japan Society of Applied Physics

[E-3-3] 5V High Threshold Voltage Normally-off MIS-HEMTs with Combined Partially Recessed and Multiple Fluorinated-Dielectric Layers Gate Structures

H. Huang1、Y.H. Wang1、Y.C. Liang1、G.S. Samudra1、C.F. Huang2、W.H. Kuo3 (1.National Univ. of Singapore、2.National Tsing Hua Univ.、3.Indus. Tech. Res. Inst. (Singapore))

https://doi.org/10.7567/SSDM.2014.E-3-3