[E-3-4] Normally-off Operation GaN HEMT Devices with Nano-pattern Structure Y.K. Fu1, W.H. Kuo1, S.F. Lin1, Y.L. Chou1 (1.Indus. Tech. Res. Inst. (Taiwan)) https://doi.org/10.7567/SSDM.2014.E-3-4