[E-4-2] 3.3-kV Double Channel-Doped SiC Vertical JFET in Cascode Configuration H. Shimizu1, S. Akiyama1, N. Yokoyama1, A. Shima1, Y. Shimamoto1 (1.Hitachi Ltd. (Japan)) https://doi.org/10.7567/SSDM.2014.E-4-2