[E-7-1] High-speed and Low-leakage Characteristics of 60-nm C-axis Aligned Crystalline Oxide Semiconductor FET with GHz-ordered Cutoff Frequency

Y. Yakubo¹, S. Nagatsuka¹, S. Matsuda¹, S. Hondo¹, Y. Hata¹, Y. Okazaki¹, Y. Yamamoto¹, M. Nagai¹, S. Sasagawa¹, T. Atsumi¹, M. Sakakura¹, T. Nakura², Y. Yamamoto¹, S. Yamazaki¹ (1.Semiconductor Energy Lab. Corp., Ltd., 2.Univ. of Tokyo (Japan))

https://doi.org/10.7567/SSDM.2014.E-7-1