The Japan Society of Applied Physics

[E-7-1] High-speed and Low-leakage Characteristics of 60-nm C-axis Aligned Crystalline Oxide Semiconductor FET with GHz-ordered Cutoff Frequency

Y. Yakubo1、S. Nagatsuka1、S. Matsuda1、S. Hondo1、Y. Hata1、Y. Okazaki1、Y. Yamamoto1、M. Nagai1、S. Sasagawa1、T. Atsumi1、M. Sakakura1、T. Nakura2、Y. Yamamoto1、S. Yamazaki1 (1.Semiconductor Energy Lab. Corp., Ltd.、2.Univ. of Tokyo (Japan))

https://doi.org/10.7567/SSDM.2014.E-7-1