High Performance III-V MOS Technologies

M.J.W. Rodwell; S. Lee; C.-Y. Huang; D. Elias; V. Chobpattana; B.J. Thibeault; W. Mitchell; S. Stemmer; A.C. Gossard

doi:https://doi.org/10.7567/SSDM.2014.E-8-1

2014 International Conference on Solid State Devices and Materials

2014年9月8日〜 2014年9月11日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[E-8-1] High Performance III-V MOS Technologies

M.J.W. Rodwell¹、S. Lee¹、C.-Y. Huang¹、D. Elias¹、V. Chobpattana²、B.J. Thibeault¹、W. Mitchell¹、S. Stemmer²、A.C. Gossard² (1.ECE Dept. Univ. of California, Santa Barbara、2.Materials Dept. Univ. of California, Santa Barbara (USA))

https://doi.org/10.7567/SSDM.2014.E-8-1

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