The Japan Society of Applied Physics

[E-8-1] High Performance III-V MOS Technologies

M.J.W. Rodwell1、S. Lee1、C.-Y. Huang1、D. Elias1、V. Chobpattana2、B.J. Thibeault1、W. Mitchell1、S. Stemmer2、A.C. Gossard2 (1.ECE Dept. Univ. of California, Santa Barbara、2.Materials Dept. Univ. of California, Santa Barbara (USA))

https://doi.org/10.7567/SSDM.2014.E-8-1