[E-8-3] Body Width Dependence of Subthreshold Slope and On-Current in GaAsSb/InGaAs Double-Gate Vertical Tunnel FETs

K. Ohashi¹、M. Fujimatsu¹、Y. Miyamoto¹ (1.Tokyo Tech (Japan))

https://doi.org/10.7567/SSDM.2014.E-8-3