Operations of CMOS Inverter and Ring Oscillator Composed of Ultra-Thin Body Poly-Ge <i>p</i>- and <i>n</i>-MISFETs for Stacked Channel 3D-IC

Y. Kamata; M. Koike; E. Kurosawa; M. Kurosawa; H. Ota; O. Nakatsuka; S. Zaima; T. Tezuka

doi:https://doi.org/10.7567/SSDM.2014.F-1-2

2014 International Conference on Solid State Devices and Materials

2014年9月8日〜 2014年9月11日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[F-1-2] Operations of CMOS Inverter and Ring Oscillator Composed of Ultra-Thin Body Poly-Ge p- and n-MISFETs for Stacked Channel 3D-IC

Y. Kamata¹、M. Koike¹、E. Kurosawa¹、M. Kurosawa²、H. Ota¹、O. Nakatsuka²、S. Zaima²、T. Tezuka¹ (1.Green Nanoelectronics Center (GNC), AIST、2.Nagoya Univ. (Japan))

https://doi.org/10.7567/SSDM.2014.F-1-2

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