Atomically Flattening of Si Surface of SOI and Isolation-patterned Wafers

T. Goto; R. Kuroda; N. Akagawa; T. Suwa; A. Teramoto; X. Li; S. Sugawa; T. Ohmi; Y. Kumagai; Y. Kamata; K. Sibusawa

doi:https://doi.org/10.7567/SSDM.2014.F-1-3

2014 International Conference on Solid State Devices and Materials

2014年9月8日〜 2014年9月11日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[F-1-3] Atomically Flattening of Si Surface of SOI and Isolation-patterned Wafers

T. Goto¹、R. Kuroda²、N. Akagawa²、T. Suwa¹、A. Teramoto¹、X. Li²、S. Sugawa^1,2、T. Ohmi¹、Y. Kumagai³、Y. Kamata³、K. Sibusawa³ (1.NICHe, Tohoku Univ.、2.Graduate School of Engineering, Tohoku Univ.、3.LAPIS Semiconductor Miyagi Co., Ltd. (Japan))

https://doi.org/10.7567/SSDM.2014.F-1-3

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