Atomically Flattening of Si Surface of SOI and Isolation-patterned Wafers

T. Goto; R. Kuroda; N. Akagawa; T. Suwa; A. Teramoto; X. Li; S. Sugawa; T. Ohmi; Y. Kumagai; Y. Kamata; K. Sibusawa

doi:https://doi.org/10.7567/SSDM.2014.F-1-3

2014 International Conference on Solid State Devices and Materials

Sep 8, 2014 - Sep 11, 2014
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[F-1-3] Atomically Flattening of Si Surface of SOI and Isolation-patterned Wafers

T. Goto¹, R. Kuroda², N. Akagawa², T. Suwa¹, A. Teramoto¹, X. Li², S. Sugawa^1,2, T. Ohmi¹, Y. Kumagai³, Y. Kamata³, K. Sibusawa³ (1.NICHe, Tohoku Univ., 2.Graduate School of Engineering, Tohoku Univ., 3.LAPIS Semiconductor Miyagi Co., Ltd. (Japan))

https://doi.org/10.7567/SSDM.2014.F-1-3

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