[F-1-4] Large Size InGaAs-o-I Substrates Fabricated by Direct Wafer Bonding on Si

E. Uccelli¹, N. Daix¹, L. Czornomaz¹, D. Caimi¹, C. Rossel¹, M. Sousa¹, H. Siegwart¹, C. Marchiori¹, J.M. Hartmann², K.T. Shiu³, C.W. Weng³, M. Krishnan³, M. Lofaro³, M. Kobayashi³, D. Sadana³, J. Fompeyrine¹ (1.IBM Zurich Research Laboratory, 2.CEA, LETI, 3.IBM T. J. Watson Research Center (Switzerland))

https://doi.org/10.7567/SSDM.2014.F-1-4