The Japan Society of Applied Physics

[F-1-4] Large Size InGaAs-o-I Substrates Fabricated by Direct Wafer Bonding on Si

E. Uccelli1、N. Daix1、L. Czornomaz1、D. Caimi1、C. Rossel1、M. Sousa1、H. Siegwart1、C. Marchiori1、J.M. Hartmann2、K.T. Shiu3、C.W. Weng3、M. Krishnan3、M. Lofaro3、M. Kobayashi3、D. Sadana3、J. Fompeyrine1 (1.IBM Zurich Research Laboratory、2.CEA, LETI、3.IBM T. J. Watson Research Center (Switzerland))

https://doi.org/10.7567/SSDM.2014.F-1-4