[F-1-4] Large Size InGaAs-o-I Substrates Fabricated by Direct Wafer Bonding on Si

E. Uccelli¹、N. Daix¹、L. Czornomaz¹、D. Caimi¹、C. Rossel¹、M. Sousa¹、H. Siegwart¹、C. Marchiori¹、J.M. Hartmann²、K.T. Shiu³、C.W. Weng³、M. Krishnan³、M. Lofaro³、M. Kobayashi³、D. Sadana³、J. Fompeyrine¹ (1.IBM Zurich Research Laboratory、2.CEA, LETI、3.IBM T. J. Watson Research Center (Switzerland))

https://doi.org/10.7567/SSDM.2014.F-1-4