[F-1-5] A New Method to Effectively Separate PBTI-induced Shallow and Deep Energy Traps in a 28nm High-k Metal-Gate MOSFET

E. Hsieh¹, P. Wu¹, S. Chung¹, J. Ke², C. Yang², C. Tsai² (1.NCTU, 2.UMC (Taiwan))

https://doi.org/10.7567/SSDM.2014.F-1-5