[F-1-5] A New Method to Effectively Separate PBTI-induced Shallow and Deep Energy Traps in a 28nm High-k Metal-Gate MOSFET

E. Hsieh¹、P. Wu¹、S. Chung¹、J. Ke²、C. Yang²、C. Tsai² (1.NCTU、2.UMC (Taiwan))

https://doi.org/10.7567/SSDM.2014.F-1-5