[F-4-3] Reduction of Parasitic Resistance in Ge nMOSFETs with NiGe/n⁺Ge Junctions by Two-step Phosphorus Ion Implantation

M. Koike¹、Y. Kamimuta¹、T. Tezuka¹ (1.AIST (Japan))

https://doi.org/10.7567/SSDM.2014.F-4-3