[F-6-2] Reduction of Defect State Density at SiO₂/SiC Interface Formed by the Thermal Oxidation Accompanied with Direct CO Generation

R. Kikuchi¹, Y. Fujino¹, K. Kita^1,2 (1.Univ. of Tokyo, 2.JST-PRESTO (Japan))

https://doi.org/10.7567/SSDM.2014.F-6-2