[F-6-2] Reduction of Defect State Density at SiO₂/SiC Interface Formed by the Thermal Oxidation Accompanied with Direct CO Generation

R. Kikuchi¹、Y. Fujino¹、K. Kita^1,2 (1.Univ. of Tokyo、2.JST-PRESTO (Japan))

https://doi.org/10.7567/SSDM.2014.F-6-2