[F-6-3] Estimation of Real SiC-MOS Characteristics by Using Novel High-Speed Pulse IV

N. Tega¹、D. Hisamoto¹、H. Yoshimoto¹、A. Shima¹、Y. Shimamoto¹ (1.Hitachi, Ltd. (Japan))

https://doi.org/10.7567/SSDM.2014.F-6-3