[F-6-3] Estimation of Real SiC-MOS Characteristics by Using Novel High-Speed Pulse IV

N. Tega¹, D. Hisamoto¹, H. Yoshimoto¹, A. Shima¹, Y. Shimamoto¹ (1.Hitachi, Ltd. (Japan))

https://doi.org/10.7567/SSDM.2014.F-6-3