Investigation of the Plasma Damage by Etching Process for TSV Formation in Via-last Backside-via 3D IC

Y. Sugawara; H. Hashiguchi; S. Tanikawa; H. Kino; K. Lee; T. Fukusima; M. Koyanagi; T. Tanaka

doi:https://doi.org/10.7567/SSDM.2014.G-2-2

2014 International Conference on Solid State Devices and Materials

2014年9月8日〜 2014年9月11日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[G-2-2] Investigation of the Plasma Damage by Etching Process for TSV Formation in Via-last Backside-via 3D IC

Y. Sugawara¹、H. Hashiguchi¹、S. Tanikawa¹、H. Kino²、K. Lee³、T. Fukusima³、M. Koyanagi³、T. Tanaka^1,2 (1.Dept. of Bioengineering and Robotics, Tohoku Univ.、2.Dept. of Biomedical Engineering, Tohoku Univ.、3.NICHe, Tohoku Univ. (Japan))

https://doi.org/10.7567/SSDM.2014.G-2-2

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