[H-1-4] Fabrication and Characterization of MoS₂ FET structure with Nano-Sheets Ca₂Nb₃O₁₀ Gate Insulator

T. Kobayashi¹、S. Hirose¹、H. Uchida²、T. Kawae¹、A. Morimoto¹ (1.Kanazawa Univ.、2.Sophia Univ. (Japan))

https://doi.org/10.7567/SSDM.2014.H-1-4