The Japan Society of Applied Physics

[H-1-4] Fabrication and Characterization of MoS2 FET structure with Nano-Sheets Ca2Nb3O10 Gate Insulator

T. Kobayashi1, S. Hirose1, H. Uchida2, T. Kawae1, A. Morimoto1 (1.Kanazawa Univ., 2.Sophia Univ. (Japan))

https://doi.org/10.7567/SSDM.2014.H-1-4