The Japan Society of Applied Physics

[J-1-2] Novel Device Architecture Proposal of Source Junctionless Tunneling Field-Effect Transistor (SJL-TFET)

Y. Kondo1, M. Goto1, Y. Morita2, T. Mori2, S. Migita2, A. Hokazono1, H. Ota2, M. Masahara2, S. Kawanaka1 (1.Toshiba Corp., 2.AIST (Japan))

https://doi.org/10.7567/SSDM.2014.J-1-2