The Japan Society of Applied Physics

[J-1-2] Novel Device Architecture Proposal of Source Junctionless Tunneling Field-Effect Transistor (SJL-TFET)

Y. Kondo1、M. Goto1、Y. Morita2、T. Mori2、S. Migita2、A. Hokazono1、H. Ota2、M. Masahara2、S. Kawanaka1 (1.Toshiba Corp.、2.AIST (Japan))

https://doi.org/10.7567/SSDM.2014.J-1-2